201103254-3 adva nced power electronics corp. 1/6 ap4002h/j-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com n-channel enhancement-mode power mosfet dss ds(on) d description absolute maximum ratings thermal data a dvanced power mosfets from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. g d s bv 600v fast switching characteristics r 5w simple drive requirement 100% avalanche test rohs-compliant, halogen-free i 2a g d s to-252 (h) d (tab) g d s to-251 (j) d (tab) o rdering information ap 40 0 2 h-hf-3 tr : in rohs-compliant halogen-free to-252 shipped on tape and reel ( 3000 pcs/reel) ap 40 0 2 j-hf-3tb : in rohs-compliant halogen-free to-251 shipped in tubes (80pcs/tube) the ap40 02 h-hf-3 is in the to-252 package which is widely preferred for commercial and industrial surface mount applications such as chopper regulators and dc/dc converters the through-hole to-251 version , AP4002J-HF-3 , is available where a small pcb footprint is required. symbol value units rthj-c maximum thermal resistance, junction-case 6.25 c /w rthj-a 62.5 c /w rthj-a maximum thermal resistance, junction-ambient 110 c /w parameter maximum thermal resistance, junction-ambient (pcb mount) 4 symbol units v ds drain-source voltage v v gs gate-source voltage i d at t c =25 c continuous drain curre n t i dm pulsed drain current 1 a p d at t c =2 5 c total power dissipation w w /c e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range -55 to 150 c 2 8 20 0.16 parameter rating 600 30 v -55 to 150 c 20 2 a linear derating factor storage temperature range
adva nced power electronics corp. 2/6 ap4002h/j-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com electrical specifications at t j =25c (unless otherwise specified) source-drain diode this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. notes: 1.pulse width limited by maximum junction temperature 2.starting t j =25 o c, v dd =50v, l=10mh, r g =25w 3.pulse test 4.surface mounted on 1 in 2 copper pad of fr4 board symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 600 - - v r ds(on) static drain-source on-resistance 3 v gs =10v, i d =1a - - 5 w v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =2a - 1.5 - s i dss drain-source leakage current v ds =600v, v gs =0v - - 100 ua i gss gate-source leakage v gs = 30v, v ds =0v - - 1 ua q g total gate charge 3 i d =2a - 12 19 nc q gs gate-source charge v ds =480v - 2 - nc q gd gate-drain ("miller") charge v gs =10v - 5.5 - nc t d(on) turn-on delay time 3 v dd =200v - 10 - ns t r rise time i d =1a - 12 - ns t d(off) turn-off delay time r g =50w, v gs =10v - 52 - ns t f fall time r d =200w -19- ns c iss input capacitance v gs =0v - 375 600 pf c oss output capacitance v ds =10v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 45 - pf symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 t j =25c, i s =2a, v gs =0v - - 1.5 v t rr reverse recovery time 3 i s =2a, v gs =0 v , - 340 - ns q rr reverse recovery charge di/dt=100a/s - 2.2 - uc
adva nced power electronics corp. 3/6 ap4002h/j-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bvdss fig 4. normalized on-resistance vs. junction temperature vs. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage vs. reverse diode junction temperature typical electrical characteristics 0.8 0.9 1 1.1 1.2 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 1 2 3 - 0 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =1a v g =10v 0 0 5 1 1 5 2 0481 2 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.5 v 0 0 5 1 1 5 2 0 4 8 1 21 62 02 42 8 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 7.0v 6.0v 5.0v v g = 4.5 v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j = 150 o c t j = 25 o c 0.4 0.6 0.8 1 1.2 - 0 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v)
adva nced power electronics corp. 4/6 ap4002h/j-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform typical electrical characteristics (cont.) 0.01 0.1 1 10 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor t/t peak t j p dm x r thjc t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 2 4 6 8 10 12 0481 21 6 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =2a v ds =480v 1 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge
adva nced power electronics corp. 5/6 ap4002h/j-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 f 2.20 2.63 3.05 f1 0.50 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: laser marking symbols e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm product: ap4002 h = rohs-compliant halogen-free to-252 4002h ywwsss date/lot code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence e3 package code
adva nced power electronics corp. 6/6 ap4002h/j-hf-3 ?2011 advanced power electronics corp. usa www.a-powerusa.com package dimensions: to-251 min nom max a 2.20 2.30 2.40 a1 0.90 1.20 1.50 b1 0.40 0.60 0.80 b2 0.60 0.85 1.05 c 0.40 0.50 0.60 c1 0.40 0.50 0.60 d 6.40 6.60 6.80 d1 4.80 5.20 5.50 e 6.70 7.00 7.30 e1 5.40 5.60 5.80 e2 1.30 1.50 1.70 e ---- 2.30 ---- f 7.00 8.30 9.60 1. all dimensions are in millimeters. 2. dimensions do not include mold protrusions. marking information: symbols millimeters 4002j ywwsss product: ap4002 package code a c1 a1 c e d e2 e1 e b1 b2 f d1 e date code (ywwsss) y: last digit of the year ww: work week sss: lot code sequence j = rohs-compliant halogen-free to-251
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